IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 4

• Manufacturer Part Number: IPB100N06S3L-03
• Description: MOSFET N-CH 55V 100A TO263-3-2
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 230µA
• Gate Charge (qg) @ Vgs: 550nC @ 10V
• Input Capacitance (ciss) @ Vds: 26240pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 77 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 70 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-03INTR; IPB100N06S3L-03XTINTR; IPB100N06S3L-03XTINTR; IPB100N06S3L03XT; SP000087978

Rev. 1.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
350
300
250
200
150
100
100
50
10
DS
0
1
C
0.1
0
); T
); V
C
p
GS
=25 °C; D =0
≥ 4 V
50
1
T
V
C
DS
100
[°C]
[V]
1 ms
10
150
100 µs
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
120
100
=f(t
10
10
10
10
80
60
40
20
C
0
-1
-2
-3
0
); V
10
p
0
)
0.01
-6
0.05
0.5
0.1
IPI100N06S3L-03, IPP100N06S3L-03
GS
single pulse
≥ 4 V
10
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB100N06S3L-03
10
-2
150
10
2007-11-07
-1
200
10
0