IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 7

• Manufacturer Part Number: IPB100N06S3L-03
• Description: MOSFET N-CH 55V 100A TO263-3-2
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 230µA
• Gate Charge (qg) @ Vgs: 550nC @ 10V
• Input Capacitance (ciss) @ Vds: 26240pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 77 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 70 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-03INTR; IPB100N06S3L-03XTINTR; IPB100N06S3L-03XTINTR; IPB100N06S3L03XT; SP000087978

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
6000
5000
4000
3000
2000
1000
= f(T
= f(Q
12
10
8
6
4
2
0
0
0
0
j
)
gate
100 A
25 A
50 A
D
); I
DD
D
100
= 80 A pulsed
50
200
Q
T
gate
100
j
[°C]
[nC]
300
11 V
150
400
44 V
500
200
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
66
64
62
60
58
56
54
52
50
48
46
GS
GS
-60
= f(T
IPI100N06S3L-03, IPP100N06S3L-03
Q
Q
gs
gs
j
); I
-20
D
= 1 mA
Q
Q
20
g
g
T
Q
Q
j
gd
gd
60
[°C]
IPB100N06S3L-03
100
Q
Q
gate
gate
140
2007-11-07
180