IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 7
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IPB100N06S3L-03
Manufacturer Part Number
IPB100N06S3L-03
Description
MOSFET N-CH 55V 100A TO263-3-2
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N06S3L-03.pdf
(9 pages)
Specifications of IPB100N06S3L-03
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.2V @ 230µA
Gate Charge (qg) @ Vgs
550nC @ 10V
Input Capacitance (ciss) @ Vds
26240pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
77 ns
Minimum Operating Temperature
- 55 C
Rise Time
70 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB100N06S3L-03INTR
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
IPB100N06S3L-03XTINTR
IPB100N06S3L-03XTINTR
IPB100N06S3L03XT
SP000087978
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB100N06S3L-03
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
6000
5000
4000
3000
2000
1000
= f(T
= f(Q
12
10
8
6
4
2
0
0
0
0
j
)
gate
100 A
25 A
50 A
D
); I
DD
D
100
= 80 A pulsed
50
200
Q
T
gate
100
j
[°C]
[nC]
300
11 V
150
400
44 V
500
200
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
66
64
62
60
58
56
54
52
50
48
46
GS
GS
-60
= f(T
IPI100N06S3L-03, IPP100N06S3L-03
Q
Q
gs
gs
j
); I
-20
D
= 1 mA
Q
Q
20
g
g
T
Q
Q
j
gd
gd
60
[°C]
IPB100N06S3L-03
100
Q
Q
gate
gate
140
2007-11-07
180