FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 11
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Manufacturer
Quantity
Price
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SuperSOT™-3/SOT-23
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDV303N
FDV301N
FDN337N
NDS355N
NDS351N
FDN359AN
FDN357N
NDS355AN
FDN361AN
NDS351AN
FDN372S
BSS138
FDN5630
NDS7002A
2N7002MTF
MMBF170
2N7002
FDN363N
BSS123
FDN5618P
NDS0605
NDS0610
BSS84
FDN360P
FDN358P
NDS356AP
NDS352AP
FDV304P
FDV302P
FDN304P
SuperSOT-3/SOT-23 N-Channel
SuperSOT-3/SOT-23 P-Channel
Products
Min. (V)
BV
100
100
-60
-60
-60
-50
-30
-30
-30
-30
-25
-25
-20
20
20
20
20
20
20
20
25
25
30
30
30
30
30
30
30
30
30
50
60
60
60
60
60
DSS
Config.
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.046
0.085
0.125
10V
0.06
0.16
0.04
0.24
0.17
0.08
0.1
3.5
0.1
7.5
0.2
0.3
10
10
–
–
–
–
–
–
–
–
–
–
2
5
5
6
5
–
–
–
R
DS(ON)
0.12@6V
0.35@6V
4.5V
0.035
0.065
0.125
0.125
0.052
0.05
0.07
0.07
0.11
0.16
0.22
0.45
0.06
0.09
0.15
0.25
0.05
0.23
7.5
0.2
0.3
0.5
1.1
10
20
10
–
–
–
–
4
6
3
Max (Ω) @ V
2-6
0.14@2.7V
0.21@2.7V
0.6@2.7V
1.5@2.7V
13@2.7V
5@2.7V
2.5V
0.082
0.05
0.06
0.08
0.07
0.1
0.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by NDS355AN
Replaced by NDS351AN
1.8V
0.12
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
1.64
0.49
0.22
7.6
4.5
3.5
6.4
3.5
1.1
4.2
3.5
2.1
1.3
5.8
1.7
1.7
1.7
1.7
1.7
8.6
1.8
1.8
0.9
6.2
3.4
1.1
12
–
7
7
5
7
4
4
2
= 5V
I
0.115
D
0.68
0.22
0.22
0.28
0.12
0.17
0.18
0.12
0.13
0.46
0.12
2.5
1.7
1.7
1.3
0.9
2.2
2.7
1.9
1.7
1.8
1.4
2.6
1.7
0.5
1.2
1.5
1.1
0.9
2.4
3
2
1
2
(A)
MOSFETs
P
D
0.35
0.35
0.35
0.36
0.36
0.36
0.36
0.36
0.35
0.35
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.3
0.2
0.3
0.2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(W)
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