FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 6

• Manufacturer Part Number: FQU2N90TU_WS
• Description: MOSFET N-CH 900V 1.7A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQU2N90TU_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete Power Products
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MOSFETs
BGA
SC70-6
SC75-6 FLMP
SuperSOT™-3/SOT-23
MicroFET™
SuperSOT™-6/TSOP-6 FLMP
SuperSOT™-6/TSOP-6
TSSOP-8
SuperSOT™-8
SO-8 FLMP
SO-8
TO-92
SOT-223
SO-14
TO-92L
TO-251 (IPAK)
TO-252 (DPAK)
DIP-8
TO-126
TO-220
TO-262 (I
TO-263 (D
TO-220F
TO-247
TO-3P
TO-3PF
TO-264
2-3
2-15
2
2-35
PAK)
2
2-20
2-23
PAK)
2-36
2-37
2-4
2-65
2-66
2-69
2-71
2-24
2-21
2-59
2-12
2-14
2-8
2-5
2-13
2-25
2-29
2-46
2-51
2-6
2-10
2-9
2-1
Discrete Power Products