FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 17

MOSFET N-CH 900V 1.7A IPAK

FQU2N90TU_WS

Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQU2N90TU_WS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQU2N90TU_WSFQU2N90TU-WS
Quantity:
2 500
www.fairchildsemi.com
TSSOP-8
FDW2501NZ
FDW2501N
FDW2503NZ
FDW2503N
FDW2510NZ
FDW9926A
FDW2507N
FDW2507NZ
FDW2509NZ
FDW2515NZ
FDW2516NZ
FDW9926NZ
FDW2520C
FDW2521C
FDW256P
FDW2506P
FDW2502P
FDW2504P
FDW264P
FDW254P
FDW254PZ
FDW252P
FDW262P
FDW2508P
FDW258P
TSSOP-8 N-Channel
TSSOP-8 Complementary N- and P-Channel
TSSOP-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
BV
-30
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
20
20
20
20
20
20
20
20
20
20
20
20
DSS
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Dual Common Drain
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.0135
10V
0.018 | 0.035
0.021 | 0.043
R
DS(ON)
0.0125
4.5V
0.018
0.018
0.021
0.024
0.032
0.019
0.019
0.028
0.032
0.022
0.035
0.043
0.012
0.012
0.047
0.018
0.011
0.02
0.02
0.03
0.02
0.01
2-12
Max (Ω) @ V
0.028 | 0.057
0.035 | 0.07
0.0145
2.5V
0.025
0.028
0.026
0.035
0.032
0.045
0.023
0.023
0.026
0.038
0.045
0.033
0.057
0.015
0.015
0.018
0.065
0.022
0.014
0.04
0.07
GS
Bold = New Products (introduced January 2003 or later)
=
0.0215
0.0215
1.8V
Discrete Power Products –
0.03
0.02
0.1
Q
@V
g
12 | 9.7
14 | 14
Typ. (nC)
GS
8.2
6.1
5.7
9.7
12
12
20
13
28
14
95
60
13
61
12
12
20
21
60
41
26
9
9
= 5V
5.5 | 3.8
I
6 | 4.4
D
5.5
5.5
5.5
6.4
4.5
7.5
7.5
7.1
5.8
5.8
4.5
5.3
4.4
3.8
9.7
9.2
9.2
8.8
4.5
6
8
6
9
(A)
MOSFETs
P
D
1.6
1.6
1.6
1.6
1.6
1.6
1.3
1.3
1.3
1.4
1.3
1.3
1.3
1.3
1
1
1
1
1
1
1
1
1
1
1
(W)

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