IRFPS37N50A Vishay, IRFPS37N50A Datasheet

MOSFET N-CH 500V 36A SUPER247

IRFPS37N50A

Manufacturer Part Number
IRFPS37N50A
Description
MOSFET N-CH 500V 36A SUPER247
Manufacturer
Vishay
Datasheet

Specifications of IRFPS37N50A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
5579pF @ 25V
Power - Max
446W
Mounting Type
Through Hole
Package / Case
Super-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
446 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPS37N50A

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91258
S-81368-Rev. B, 21-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 36 A, dI/dt ≤ 145 A/µs, V
(Max.) (Ω)
SUPER-247
J
= 25 °C, L = 1.94 mH, R
a
TM
G
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
DS
G
= 25 Ω, I
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
180
46
71
AS
D
S
= 36 A (see fig. 12).
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.13
GS
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
SUPER-247
IRFPS37N50APbF
SiHFPS37N50A-E3
IRFPS37N50A
SiHFPS37N50A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
IRFPS37N50A, SiHFPS37N50A
Requirement
Ruggedness
and Current
TM
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
g
Results in Simple Drive
- 55 to + 150
LIMIT
1260
300
± 30
500
144
446
3.6
3.5
36
23
36
44
d
Vishay Siliconix
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFPS37N50A Summary of contents

Page 1

... A, dI/dt ≤ 145 A/µs, V ≤ 1.6 mm from case containing terminations are not RoHS compliant, exemptions may apply Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A Power MOSFET FEATURES • Low Gate Charge Q 500 Requirement 0.13 • Improved Gate, Avalanche and Dynamic dV/dt 180 Ruggedness 46 • ...

Page 2

... IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ...

Page 3

... BOTTOM 4.5V 10 20µs PULSE WIDTH T = 150 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A ° 10 100 4.5V ° 10 100 Vishay Siliconix 1000 100 ° 150 ° 50V DS 20µs PULSE WIDTH 1 4 ...

Page 4

... IRFPS37N50A, SiHFPS37N50A Vishay Siliconix 100000 1MHz iss rss oss ds gd 10000 C iss 1000 C oss 100 C rss Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 36A 400V 250V 100V FOR TEST CIRCUIT SEE FIGURE 120 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix ...

Page 6

... IRFPS37N50A, SiHFPS37N50A Vishay Siliconix 3000 2500 2000 1500 1000 500 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 580 I D TOP 16A 23A BOTTOM 36A 560 540 520 500 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91258. Document Number: 91258 S-81368-Rev. B, 21-Jul-08 IRFPS37N50A, SiHFPS37N50A Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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