IRFPS37N50A Vishay, IRFPS37N50A Datasheet - Page 2

• Manufacturer Part Number: IRFPS37N50A
• Description: MOSFET N-CH 500V 36A SUPER247
• Manufacturer: Vishay

Specifications of IRFPS37N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5579pF @ 25V
• Power - Max: 446W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 446 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS37N50A

IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
oss
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
C
R
V
oss
t
t
R
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
SM
I
t
t
on
thCS
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
V
GS
GS
J
GS
DS
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 10 V
= 10 V
J
= 0 V
= 400 V, V
= 25 °C, I
R
V
V
V
V
V
f = 1.0 MHz, see fig. 5
G
TYP.
TEST CONDITIONS
oss
0.24
DS
DS
DD
GS
DS
= 2.15 Ω, R
-
-
= 500 V, V
= V
= 250 V, I
while V
F
= 0 V, I
= 50 V, I
V
V
see fig. 10
V
= 36 A, dI/dt = 100 A/µs
GS
V
V
DS
S
GS
GS
I
DS
GS
DS
D
= 36 A, V
= ± 30 V
, I
= 25 V,
V
= 36 A, V
= 0 V,
see fig. 6 and 13
= 400 V , f = 1.0 MHz
= 0 V, T
= 1.0 V , f = 1.0 MHz
DS
DS
D
D
D
= 250 µA
= 250 µA
D
D
I
= 0 V to 400 V
is rising from 0 to 80 % V
GS
D
= 22 A
= 36 A,
= 7.0 Ω,
b
= 22 A
= 0 V
GS
J
DS
G
= 150 °C
= 0 V
b
= 400 V,
b
b
MAX.
b
0.28
D
S
40
-
b
MIN.
500
2.0
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
Document Number: 91258
S-81368-Rev. B, 21-Jul-08
TYP.
5579
7905
810
221
400
570
8.6
36
23
98
52
80
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.13
S
250
180
144
860
4.0
1.5
25
46
71
36
13
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V