IRFPS37N50A Vishay, IRFPS37N50A Datasheet - Page 3

• Manufacturer Part Number: IRFPS37N50A
• Description: MOSFET N-CH 500V 36A SUPER247
• Manufacturer: Vishay

Specifications of IRFPS37N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5579pF @ 25V
• Power - Max: 446W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 446 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS37N50A

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91258
S-81368-Rev. B, 21-Jul-08
1000
100
100
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
T = 25 C
J
4.5V
J
4.5V
10
10
°
°
100
100
IRFPS37N50A, SiHFPS37N50A
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
Fig. 4 - Normalized On-Resistance vs. Temperature
1
4.0
-60 -40 -20
I =
D
Fig. 3 - Typical Transfer Characteristics
36A
T = 150 C
V
J
T , Junction Temperature ( C)
5.0
GS
J
, Gate-to-Source Voltage (V)
0
°
20 40 60
T = 25 C
6.0
J
°
Vishay Siliconix
V
20µs PULSE WIDTH
7.0
DS
80 100 120 140 160
= 50V
V
www.vishay.com
8.0
°
GS
=
10V
9.0
3