IRFPS37N50A Vishay, IRFPS37N50A Datasheet - Page 4

• Manufacturer Part Number: IRFPS37N50A
• Description: MOSFET N-CH 500V 36A SUPER247
• Manufacturer: Vishay

Specifications of IRFPS37N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5579pF @ 25V
• Power - Max: 446W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 446 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS37N50A

IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
www.vishay.com
4
100000
10000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
100
20
16
12
10
8
4
0
0
1
I =
D
36A
V
DS
40
Q , Total Gate Charge (nC)
G
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
10
= 0V,
= C
= C
= C
80
gs
gd
ds
+ C
+ C
V
V
V
DS
DS
DS
f = 1MHz
gd
gd
C
C
C
120
FOR TEST CIRCUIT
, C
rss
= 400V
= 250V
= 100V
oss
iss
SEE FIGURE
100
ds
SHORTED
160
13
1000
200
A
1000
100
10
1000
1
100
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.1
10
10
1
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
0.2
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
DS
°
T = 150 C
V
0.4
°
J
SD
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
100
°
0.6
BY R
T = 25 C
DS(on)
J
0.8
10us
100us
1ms
10ms
Document Number: 91258
S-81368-Rev. B, 21-Jul-08
1000
°
1.0
V
GS
1.2
= 0 V
10000
1.4