IRFPS37N50A Vishay, IRFPS37N50A Datasheet - Page 6

• Manufacturer Part Number: IRFPS37N50A
• Description: MOSFET N-CH 500V 36A SUPER247
• Manufacturer: Vishay

Specifications of IRFPS37N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5579pF @ 25V
• Power - Max: 446W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 446 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS37N50A

IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
3000
2500
2000
1500
1000
500
0
25
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Starting T , Junction Temperature ( C)
Q
50
GS
J
Charge
Q
75
Q
GD
G
100
TOP
BOTTOM
125
°
I D
16A
23A
36A
150
Fig. 12d - Maximum Avalanche Energy vs. Drain Current
580
560
540
520
500
0
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
I
av
0.2 µF
10
, Avalanche Current (A)
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
20
G
Document Number: 91258
D.U.T.
S-81368-Rev. B, 21-Jul-08
I
D
30
+
-
V
DS
40
A