IRFPS37N50A Vishay, IRFPS37N50A Datasheet - Page 5

• Manufacturer Part Number: IRFPS37N50A
• Description: MOSFET N-CH 500V 36A SUPER247
• Manufacturer: Vishay

Specifications of IRFPS37N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5579pF @ 25V
• Power - Max: 446W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 446 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS37N50A

Document Number: 91258
S-81368-Rev. B, 21-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
40
30
20
10
0.001
Fig. 12a - Unclamped Inductive Test Circuit
0
0.01
0.1
25
0.00001
1
R
D = 0.50
20 V
G
V
DS
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
t
p
C
I
AS
D.U.T.
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
15 V
Driver
125
°
+
- V
t , Rectangular Pulse Duration (sec)
1
A
DD
0.001
150
IRFPS37N50A, SiHFPS37N50A
0.01
Fig. 12b - Unclamped Inductive Waveforms
I
1. Duty factor D = t / t
2. Peak T = P
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Notes:
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
J
GS
t
d(on)
V
DM
DS
t
x Z
r
1
0.1
thJC
t
p
P
2
DM
+ T
D.U.T.
C
t
1
Vishay Siliconix
R
D
t
t
d(off)
V
2
DS
t
f
+
-
www.vishay.com
V
DD
1
5