BUK75150-55A,127 NXP Semiconductors, BUK75150-55A,127 Datasheet
BUK75150-55A,127
Specifications of BUK75150-55A,127
BUK75150-55A
BUK75150-55A
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BUK75150-55A,127 Summary of contents
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BUK75/76150-55A TrenchMOS™ standard level FET Rev. 02 — 25 November 2003 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS™ technology. 1.2 Features Very low on-state resistance 175 ...
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... Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name Description BUK75150-55A TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB 2 BUK76150-55A D -PAK Plastic single-ended surface mounted package (Philips version leads (one lead cropped) 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) ...
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Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...
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Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting th(j-mb) base R thermal resistance from junction to ambient th(j-a) SOT78 (TO-220AB) 2 SOT404 (D -PAK) 5.1 Transient thermal impedance 10 Z ...
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Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...
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Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 12342 Product data Conditions Min ...
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Philips Semiconductors ( 9.5 9 8 6.5 6 5 300 Fig ...
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Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature. 3.5 g ...
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Philips Semiconductors ( 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; ...
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Philips Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...
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Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...
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Philips Semiconductors 8. Soldering 2.25 8.35 8.15 4.60 4.85 7.95 solder lands solder resist occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 12342 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 ...
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Philips Semiconductors 9. Revision history Table 6: Revision history Rev Date CPCN Description 02 20031125 - Product data (9397 750 12342) Modifications: • Maximum source-drain (diode forward) voltage changed from 1 1 • Source-drain (diode forward) ...
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Philips Semiconductors Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...
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Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...