BUK75150-55A,127 NXP Semiconductors, BUK75150-55A,127 Datasheet - Page 12

• Manufacturer Part Number: BUK75150-55A,127
• Description: MOSFET N-CH 55V 11A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK75150-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 322pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056261127; BUK75150-55A; BUK75150-55A

Philips Semiconductors
8. Soldering
9397 750 12342
Product data
Fig 18. Reflow soldering footprint for SOT404.
Dimensions in mm.
8.15
7.95
4.85
8.35
solder lands
solder resist
occupied area
solder paste
2.25
4.60
2.15
1.50
0.30
3.00
1.50
Rev. 02 — 25 November 2003
10.85
10.60
10.50
7.50
7.40
5.08
1.20
1.30
1.55
1.70
BUK75/76150-55A
MSD057
TrenchMOS™ standard level FET
0.20
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.40
8.275
8.075
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