BUK75150-55A,127 NXP Semiconductors, BUK75150-55A,127 Datasheet - Page 9

• Manufacturer Part Number: BUK75150-55A,127
• Description: MOSFET N-CH 55V 11A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK75150-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 322pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056261127; BUK75150-55A; BUK75150-55A

Philips Semiconductors
9397 750 12342
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
V
DS
GS
10
I D
(A)
8
6
4
2
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
T j = 175 C
3
T j = 25 C
6
I S
(A)
60
40
20
0
V GS (V)
0
03np19
Rev. 02 — 25 November 2003
0.5
9
T j = 175 C
T j = 25 C
1
Fig 14. Gate-source voltage as a function of gate
1.5
T
V GS
(V)
j
= 25 C; I
10
8
6
4
2
0
charge; typical values.
0
2
V SD (V)
03np16
D
= 3 A
2.5
BUK75/76150-55A
V DD = 14 V
TrenchMOS™ standard level FET
2
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4
V DD = 44 V
Q G (nC)
03np17
6
9 of 15