BUK75150-55A,127 NXP Semiconductors, BUK75150-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK75150-55A,127
• Description: MOSFET N-CH 55V 11A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK75150-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 322pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056261127; BUK75150-55A; BUK75150-55A

Philips Semiconductors
Table 5:
T
9397 750 12342
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
SD
r
= 25 C unless otherwise specified.
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
…continued
Conditions
I
Figure 15
I
V
S
S
GS
= 10 A; V
= 10 A; dI
= 10 V; V
Rev. 02 — 25 November 2003
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Min
-
-
-
BUK75/76150-55A
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Typ
1.25
32
50
Max
1.5
-
-
Unit
V
ns
nC
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