BUK75150-55A,127 NXP Semiconductors, BUK75150-55A,127 Datasheet - Page 11

• Manufacturer Part Number: BUK75150-55A,127
• Description: MOSFET N-CH 55V 11A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK75150-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 5.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 322pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056261127; BUK75150-55A; BUK75150-55A

Philips Semiconductors
Fig 17. SOT404 (D
9397 750 12342
Product data
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
2-
D
PAK).
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 02 — 25 November 2003
10.30
9.70
E
3
0
b
2.54
e
scale
EIAJ
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
BUK75/76150-55A
TrenchMOS™ standard level FET
A 1
Q
PROJECTION
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
c
EUROPEAN
A
ISSUE DATE
99-06-25
01-02-12
SOT404
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