BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7635-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7635-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to
drain
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
Simplified outline
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 14 A; V
= 25 °C; V
Figure 3
= 100 °C; V
= 25 °C; pulsed; t
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
SOT404 (D2PAK)
p
≤ 10 µs; T
sup
1
j
≤ 175 °C
mb
j(init)
2
GS
≤ 55 V; R
GS
3
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
p
N-channel TrenchMOS standard level FET
= 25 °C
≤ 10 µs;
GS
= 50 Ω;
Figure
Graphic symbol
Figure 1
1;
BUK7635-55A
mbb076
G
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
175
175
Version
SOT404
Max
55
55
20
35
25
139
85
35
139
49
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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