BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK7635-55A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
T
V
R
from drain lead 6 mm from package to
centre of die ; T
from upper edge of drain mounting base
to centre of die ; T
from source lead to source bond pad ;
T
I
see
I
V
D
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 0.25 A; V
= 0.25 A; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 °C; see
= 25 °C
= 25 A; V
= 20 A; dI
Figure 10
Figure 10
Figure 10
Figure
Figure
Figure 14
= 55 V; V
= 55 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= 30 V; R
= -10 V; V
Rev. 02 — 27 January 2011
= 10 Ω; T
11; see
11; see
GS
S
DS
DS
DS
DS
D
D
/dt = -100 A/µs;
GS
GS
GS
GS
DS
L
DS
DS
= 20 A; T
= 20 A; T
= 0 V; T
= V
= V
= V
= 1.2 Ω; V
= 25 V; f = 1 MHz;
Figure 13
j
j
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 30 V; T
j
GS
GS
GS
Figure 12
Figure 12
= 25 °C
; T
; T
; T
j
= 25 °C;
j
j
j
j
j
j
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 175 °C;
= 25 °C;
j
GS
= 25 °C
= -55 °C
= 25 °C
= 175 °C
= 25 °C
= 25 °C
j
= 25 °C
= 10 V;
N-channel TrenchMOS standard level FET
BUK7635-55A
Min
55
50
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.05
-
2
2
-
30
650
170
110
10
62
24
20
4.5
2.5
7.5
0.85
40
80
© NXP B.V. 2011. All rights reserved.
205
-
Max
-
-
4
-
4.4
10
500
100
100
70
35
872
153
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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