BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

NXP Semiconductors
BUK7635-55A
Product data sheet
Fig 1.
Fig 3.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
1
P
100
t
p
T
δ =
150
R
T
t
p
t
All information provided in this document is subject to legal disclaimers.
T
DSon
mb
03aa24
(°C)
= V
Rev. 02 — 27 January 2011
DS
200
/ I
D
D.C.
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μs
1 ms
10 ms
100 ms
p
BUK7635-55A
100
= 10 μs
03nb84
102
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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