BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7635-55A,118
• Description: MOSFET N-CH 55V 35A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7635-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 872pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056192118; BUK7635-55A /T3; BUK7635-55A /T3

NXP Semiconductors
BUK7635-55A
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
2500
2000
1500
1000
C
500
0
10
as a function of drain-source voltage; typical
values
−2
C
C
C
iss
oss
rss
10
−1
1
10
All information provided in this document is subject to legal disclaimers.
V
DS
03nb83
(V)
Rev. 02 — 27 January 2011
10
2
Fig 14. Reverse diode current as a function of reverse
(A)
I
S
120
100
80
60
40
20
0
diode voltage; typical values
0
N-channel TrenchMOS standard level FET
0.5
T
j
= 175 °C
BUK7635-55A
1.0
T
j
= 25 °C
1.5
© NXP B.V. 2011. All rights reserved.
V
SD
03nb76
(V)
2.0
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