BUK7635-55A,118 NXP Semiconductors, BUK7635-55A,118 Datasheet - Page 7

MOSFET N-CH 55V 35A SOT404

BUK7635-55A,118

Manufacturer Part Number
BUK7635-55A,118
Description
MOSFET N-CH 55V 35A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7635-55A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
872pF @ 25V
Power - Max
85W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
85000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056192118
BUK7635-55A /T3
BUK7635-55A /T3
NXP Semiconductors
BUK7635-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
10
80
70
60
50
40
30
20
8
6
4
2
0
gate charge; typical values
of drain current; typical values
Gate-source voltage as a function of turn-on
0
0
V
5.5
DD
= 14 V
20
6 6.5 7
10
40
8
V
60
GS
20
(V) = 10
V
9
DD
Q
80
All information provided in this document is subject to legal disclaimers.
= 44 V
G
(nC)
I
D
03nb77
03nb82
(A)
Rev. 02 — 27 January 2011
100
30
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.8
1.2
0.6
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7635-55A
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
(°C)
03aa32
03aa28
180
180
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