BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 10
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9510-55A,127
Manufacturer Part Number
BUK9510-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9510-55A127.pdf
(14 pages)
Specifications of BUK9510-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
68nC @ 5V
Input Capacitance (ciss) @ Vds
4307pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
75 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
139 ns
Minimum Operating Temperature
- 55 C
Rise Time
155 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056851127
BUK9510-55A
BUK9510-55A
BUK9510-55A
BUK9510-55A
Philips Semiconductors
Fig 17. SOT404 (D
9397 750 08555
Product data
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
2
D
-PAK).
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
Rev. 01 — 20 August 2001
10.30
9.70
E
3
0
b
BUK9510-55A; BUK9610-55A
2.54
e
scale
EIAJ
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
c
EUROPEAN
A
ISSUE DATE
99-06-25
01-02-12
SOT404
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