BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 3

MOSFET N-CH 55V 75A SOT78

BUK9510-55A,127

Manufacturer Part Number
BUK9510-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9510-55A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
68nC @ 5V
Input Capacitance (ciss) @ Vds
4307pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
75 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
139 ns
Minimum Operating Temperature
- 55 C
Rise Time
155 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056851127
BUK9510-55A
BUK9510-55A
Philips Semiconductors
9397 750 08555
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
P der
(%)
function of mounting base temperature.
120
100
= 25 C; I
80
60
40
20
0
=
0
I D
---------------------- -
P
(A)
10 3
10 2
10
tot 25 C
1
P
1
tot
Capped at 75 A due to package
DM
P
50
single pulse.
t p
100%
T
100
=
t p
T
t
R DSon = V DS / I D
150
T mb (ºC)
03aa16
200
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
DC
10
Fig 2. Continuous drain current as a function of
V
I
der
GS
I D
(A)
mounting base temperature.
120
100
=
80
60
40
20
4.5 V
0
25
-------------------
I
D 25 C
I
D
50
V DS (V)
75
100%
Capped at 75 A due to package
TrenchMOS™ logic level FET
100
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
125
t p = 10 µs
1 ms
10 ms
100 ms
100 µs
150
03nf86
175
T mb (ºC)
10 2
200
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