BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9510-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9510-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 68nC @ 5V
• Input Capacitance (ciss) @ Vds: 4307pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 75 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 139 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 155 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056851127; BUK9510-55A; BUK9510-55A

Philips Semiconductors
9397 750 08555
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
DS
GS
I D
(A)
function of gate-source voltage; typical values.
100
= 25 V
= 0 V
80
60
40
20
0
0
1
T j = 175 ºC
2
T j = 25 ºC
3
I S
(A)
100
V GS (V)
80
60
40
20
0
0.0
4
Rev. 01 — 20 August 2001
0.5
BUK9510-55A; BUK9610-55A
T j = 175 ºC
Fig 14. Gate-source voltage as a function of turn-on
1.0
T
j
= 25 C; I
T j = 25 ºC
V SD (V)
V GS
(V)
gate charge; typical values.
5
4
3
2
1
0
0
1.5
D
= 25 A
20
V DD = 14 V
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
40
V DD = 44 V
60
Q G (nC)
80
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