BUK9510-55A,127 NXP Semiconductors, BUK9510-55A,127 Datasheet - Page 6
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK9510-55A,127
Manufacturer Part Number
BUK9510-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9510-55A127.pdf
(14 pages)
Specifications of BUK9510-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
68nC @ 5V
Input Capacitance (ciss) @ Vds
4307pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
75 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
139 ns
Minimum Operating Temperature
- 55 C
Rise Time
155 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056851127
BUK9510-55A
BUK9510-55A
BUK9510-55A
BUK9510-55A
Philips Semiconductors
Table 5:
T
9397 750 08555
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
R DSon
= 25 C; t
= 25 C
I D
(A)
(m )
350
300
250
200
150
100
function of drain-source voltage; typical values.
of drain current; typical values.
50
25
20
15
10
0
5
0
Characteristics
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
V GS (V) =
V GS (V) = 10
p
= 300 s
50
2
3 3.2 3.4 3.6 3.8
100
4
…continued
8
150
6
4
6
200
8
V DS (V)
I D (A)
Conditions
I
Figure 15
I
V
03nd75
S
S
5
GS
2.2
= 25 A; V
= 20 A; dI
4
3
250
10
5
= 10 V; V
Rev. 01 — 20 August 2001
BUK9510-55A; BUK9610-55A
GS
S
/dt = 100 A/ s
= 0 V
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
j
R DSon
= 25 C; I
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
1.5
0.5
12
10
2
1
0
---------------------------- -
R
8
6
-60
DSon 25 C
3
R
DSon
D
Min
-
-
-
= 25 A
5
0
7
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
0.85
77
230
60
9
11
120
13
T j (ºC)
Max
1.2
-
-
V GS (V)
03ne89
180
15
Unit
V
ns
nC
6 of 14