BUK7608-40B,118 NXP Semiconductors, BUK7608-40B,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7608-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7608-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 101 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057699118::BUK7608-40B /T3::BUK7608-40B /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7608-40B_4
Product data sheet
Pin
1
2
3
mb
Type number
BUK7608-40B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
[1]
It is not possible to make a connection to pin 2.
Description
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Conditions
T
R
T
3;
T
T
3;
T
T
T
T
t
p
j
mb
mb
mb
mb
mb
mb
mb
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 25 °C; V
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C;
= 25 °C;
= 20 kΩ
Rev. 04 — 24 September 2008
j
≤ 175 °C
p
GS
GS
≤ 10 µs; pulsed; see
GS
Figure 2
[1]
= 10 V; see
= 10 V; see
= 10 V; see
mb
= 25 °C
Simplified outline
Figure
Figure
Figure
(D2PAK)
SOT404
1
Figure 3
N-channel TrenchMOS standard level FET
1; see
1; see
mb
1;
2
3
Figure
Figure
[1]
[1]
[2]
[1]
[2]
BUK7608-40B
Graphic symbol
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2008. All rights reserved.
Max
40
40
20
101
71
75
407
157
175
175
101
75
407
D
Version
SOT404
S
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
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