BUK7608-40B,118 NXP Semiconductors, BUK7608-40B,118 Datasheet - Page 8

• Manufacturer Part Number: BUK7608-40B,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7608-40B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 101 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057699118::BUK7608-40B /T3::BUK7608-40B /T3

NXP Semiconductors
BUK7608-40B_4
Product data sheet
Fig 13. Reverse diode current as a function of reverse
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
(A)
I
S
100
75
50
25
0
0.0
diode voltage; typical values
0.3
T
j
= 175 °C
0.6
(pF)
3000
2000
1000
C
0.9
0
10
25 °C
−2
V
003aac071
SD
(V)
Rev. 04 — 24 September 2008
1.2
10
−1
1
Fig 14. Gate-source voltage as a function of turn-on
C
C
C
oss
rss
iss
V
(V)
GS
10
8
6
4
2
0
10
gate charge; typical values
0
V
N-channel TrenchMOS standard level FET
003aac078
DS
(V)
10
10
2
V
DD
BUK7608-40B
20
= 14 V
V
DD
30
© NXP B.V. 2008. All rights reserved.
= 32 V
Q
003aac072
G
(nC)
40
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