BUK7608-40B,118 NXP Semiconductors, BUK7608-40B,118 Datasheet - Page 4

MOSFET N-CH 40V 75A D2PAK

BUK7608-40B,118

Manufacturer Part Number
BUK7608-40B,118
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7608-40B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
157W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
36nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
40V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
101 A
Power Dissipation
157000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057699118::BUK7608-40B /T3::BUK7608-40B /T3
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7608-40B_4
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Z
(K / W)
th(j − mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
10
−5
Conditions
mounted on a printed-circuit board;
minimum footprint
see
Figure 4
10
−4
Rev. 04 — 24 September 2008
10
−3
N-channel TrenchMOS standard level FET
10
−2
Min
-
-
BUK7608-40B
10
P
−1
Typ
50
-
t
p
T
t
© NXP B.V. 2008. All rights reserved.
p
(s)
003aac080
δ =
Max
-
0.95
T
t
t
p
1
Unit
K/W
K/W
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