BUK9E06-55A,127 NXP Semiconductors, BUK9E06-55A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9E06-55A,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E06-55A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056832127

Philips Semiconductors
9397 750 08416
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
P der
(%)
der
mb
function of mounting base temperature.
120
100
= 25 C; I
80
60
40
20
=
0
0
----------------------
P
I D
(A)
10 3
10 2
tot 25 C
10
P
1
tot
25
1
DM
Capped at 75 A due to package
P
50
single pulse.
100%
t p
T
75
100
=
t p
T
t
125
R DSon = V DS / I D
150
T mb ( o C)
175
03na19
200
Rev. 03 — 23 July 2001
BUK9506-55A; BUK9606-55A;
D.C.
10
Fig 2. Continuous drain current as a function of
V
I
der
GS
I D
(A)
mounting base temperature.
180
160
140
120
100
=
80
60
40
20
0
4.5 V
------------------ -
I
25
D 25 C
Capped at 75A due to package
I
D
50
100%
V DS (V)
75
100
BUK9E06-55A
125
© Philips Electronics N.V. 2001. All rights reserved.
t p = 10 us
100 us
1 ms
10 ms
100 ms
150
175
10 2
T j (ºC)
200
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