BUK9E06-55A,127 NXP Semiconductors, BUK9E06-55A,127 Datasheet - Page 8

• Manufacturer Part Number: BUK9E06-55A,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E06-55A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056832127

Philips Semiconductors
9397 750 08416
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
I D
(A)
function of gate-source voltage; typical values.
100
= 25 V
= 0 V
80
60
40
20
0
0
0.5
T j = 175 o C
1.0
1.5
2.0
2.5
T j = 25 o C
I S
(A)
100
80
60
40
20
3.0
0
V GS (V)
0
03ne97
3.5
0.2
Rev. 03 — 23 July 2001
BUK9506-55A; BUK9606-55A;
T j = 175 o C
0.4
Fig 14. Gate-source voltage as a function of turn-on
0.6
T
j
= 25 C; I
T j = 25 o C
0.8
gate charge; typical values.
V GS
(V)
V SD (V)
5
4
3
2
1
0
03ne94
0
1.0
D
= 25 A
20
V DD = 14 V
40
BUK9E06-55A
60
© Philips Electronics N.V. 2001. All rights reserved.
80
V DD = 44 V
100
Q G (nC)
03ne95
120
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