BUK9E06-55A,127 NXP Semiconductors, BUK9E06-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9E06-55A,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9E06-55A,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 154 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056832127

Table 5:
T
Philips Semiconductors
9397 750 08416
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
I D
R DSon
(A)
= 25 C; t
= 25 C
(m )
400
350
300
250
200
150
100
function of drain-source voltage; typical values.
of drain current; typical values.
50
Characteristics
0
8
7
6
5
4
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
0
7
p
10
= 300 s
3.2
3.4
3.6
5
4
20
2
V GS (V) = 3
6
5
40
4
…continued
60
6
V GS (V) =
80
8
V DS (V)
I D (A)
Conditions
I
Figure 15
I
V
S
S
03ne99
03nf00
GS
4
= 30 A; V
= 20 A; dI
100
10
= 10 V; V
2.4
3
Rev. 03 — 23 July 2001
BUK9506-55A; BUK9606-55A;
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
R DSon
j
a
(m )
= 25 C; I
a
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
2.4
1.8
1.2
0.6
8
7
6
5
4
0
--------------------------- -
R
-60
2
DSon 25 C
R
DSon
D
Min
= 25 A
4
0
BUK9E06-55A
Typ
0.85
80
200
60
6
© Philips Electronics N.V. 2001. All rights reserved.
120
8
V GS (V)
T j ( o C)
Max
1.2
03ne98
03ne89
180
10
Unit
V
ns
nC
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