BUK7E07-55B,127 NXP Semiconductors, BUK7E07-55B,127 Datasheet - Page 3

• Manufacturer Part Number: BUK7E07-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E07-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061495127

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(1) Capped at 75 A due to package.
(%)
der
120
(A)
80
40
I
D
0
10
10
function of mounting base temperature
T
P
10
0
mb
1
3
2
10
der
= 25 C; I
1
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse.
100 %
100
Limit R
150
DSon
T
003aab844
mb
= V
( C)
1
DS
Rev. 01 — 29 January 2008
200
/ I
D
(1)
Fig 2. Continuous drain current as a function of
(1) Capped at 75 A due to package.
(A)
I
D
120
V
mounting base temperature
80
40
0
GS
0
N-channel TrenchMOS standard level FET
10 V
10
(1)
50
BUK7E07-55B
DC
100
V
DS
(V)
150
© NXP B.V. 2008. All rights reserved.
t
p
T
= 10 s
100 s
1 ms
10 ms
100 ms
003aac120
mb
003aac121
( C)
200
10
2
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