BUK7E07-55B,127 NXP Semiconductors, BUK7E07-55B,127 Datasheet - Page 9

• Manufacturer Part Number: BUK7E07-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E07-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061495127

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT226 (I2PAK)
BUK7E07-55B_1
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT226
4.5
4.1
A
1.40
1.27
A 1
0.85
0.60
b
IEC
D
L
b 1
1.3
1.0
D 1
b 1
0.7
0.4
3-lead TO-220AB
c
low-profile
JEDEC
1
e
max
11
D
E
REFERENCES
2
Rev. 01 — 29 January 2008
e
D 1
1.6
1.2
3
0
b
10.3
9.7
E
L 1
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
L
mounting
N-channel TrenchMOS standard level FET
base
3.30
2.79
A 1
L 1
Q
2.6
2.2
Q
A
PROJECTION
EUROPEAN
c
BUK7E07-55B
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
05-06-23
06-02-14
SOT226
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