BUK7E07-55B,127 NXP Semiconductors, BUK7E07-55B,127 Datasheet - Page 8

• Manufacturer Part Number: BUK7E07-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E07-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061495127

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of
(A)
(A)
I
I
S
D
100
100
V
function of gate-source voltage; typical values
V
source-drain (diode forward) voltage; typical
values
75
50
25
75
50
25
DS
GS
0
0
0.0
0
= 25 V
= 0 V
T
2
j
= 175 C
T
0.5
j
= 175 C
4
T
1.0
T
j
= 25 C
j
= 25 C
6
V
SD
V
003aac130
003aac128
GS
(V)
(V)
Rev. 01 — 29 January 2008
1.5
8
Fig 14. Gate-source voltage as a function of gate
Fig 16. Single-pulse and repetitive avalanche rating;
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive.
V
I
(A)
(V)
AL
10
GS
10
T
charge; typical values
See
avalanche current as a function of avalanche
time
10
10
j
1
2
1
10
8
6
4
2
0
= 25 C; I
N-channel TrenchMOS standard level FET
0
Table note 3
3
D
10
= 25 A
j
j
= 25 C.
= 150 C.
2
of
20
Table 3
BUK7E07-55B
V
DD
10
= 14 V
1
Limiting values.
40
© NXP B.V. 2008. All rights reserved.
V
1
DD
Q
(1)
(2)
(3)
G
t
AL
003aac131
003aac129
= 44 V
(nC)
(ms)
10
60
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