BUK7E07-55B,127 NXP Semiconductors, BUK7E07-55B,127 Datasheet - Page 5

• Manufacturer Part Number: BUK7E07-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E07-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061495127

NXP Semiconductors
6. Characteristics
Table 5.
T
BUK7E07-55B_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown voltage I
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state resistance V
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
V
V
I
see
V
see
V
V
measured from drain lead 6 mm from
package to centre of die
measured from source lead
to source bond pad
I
I
V
D
D
D
S
S
DS
GS
GS
GS
DS
GS
GS
T
T
T
T
T
T
T
T
T
= 25 A; V
= 20 A; dI
= 0.25 mA; V
= 1 mA; V
= 25 A; V
j
j
j
j
j
j
j
j
j
Rev. 01 — 29 January 2008
Figure 14
Figure 12
= 55 V; V
= 20 V; V
= 10 V; I
= 0 V; V
= 30 V; R
= 10 V; R
=
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
V; V
DS
GS
S
DS
R
DS
D
/dt = 100 A/ s;
GS
L
G
= 30 V
= 25 A; see
= 44 V; V
= 0 V; see
DS
= V
= 1.2 ;
GS
= 25 V; f = 1 MHz;
= 10
= 0 V
= 0 V
= 0 V
GS
; see
GS
Figure 15
Figure 9
Figure 6
= 10 V;
N-channel TrenchMOS standard level FET
and
and
10
8
BUK7E07-55B
Min
55
50
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
5.8
-
53
12
17
2820
554
200
24
52
77
41
4.5
7.5
0.85
62
60
© NXP B.V. 2008. All rights reserved.
Max
-
-
4
-
4.4
1
500
100
7.1
14.2
-
-
-
3760
665
274
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
5 of 12
A
A