BUK7E07-55B,127 NXP Semiconductors, BUK7E07-55B,127 Datasheet - Page 6

• Manufacturer Part Number: BUK7E07-55B,127
• Description: MOSFET N-CH TRENCH 55V I2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7E07-55B,127

• Package / Case: I²Pak, TO-220AB (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 203W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.2 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 119 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061495127

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R
(m )
(A)
I
DSon
D
300
200
100
T
function of drain-source voltage; typical values
T
of drain current; typical values
25
20
15
10
j
j
0
5
0
= 25 C
= 25 C
0
0
V
GS
(V) = 6.0
20
2
10
100
6.5
9.0
4
7.0
V
GS
7.5
6
(V) = 8.5
200
8.0
8
I
D
003aac123
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
V
003aac125
(A)
DS
Rev. 01 — 29 January 2008
(V)
9.0
10
10
300
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
a
R
1.5
0.5
(m )
DSon
2
1
0
T
of gate-source voltage; typical values
factor as a function of junction temperature
a
60
25
20
15
10
j
= 25 C; I
5
0
=
N-channel TrenchMOS standard level FET
5
----------------------------- -
R
DSon 25 C
R
DSon
D
0
= 25 A
10
BUK7E07-55B
60
15
120
© NXP B.V. 2008. All rights reserved.
003aab906
T
V
j
GS
( C)
003aac124
(V)
180
20
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