PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN004-60P,127
• Description: MOSFET N-CH 60V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Input Capacitance (ciss) @ Vds: 8300pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057040127; PSMN004-60P; PSMN004-60P

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09156
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
D
DM
S
SM
DS(AL)S
DS
tot
j
DS
DGR
GS
GSM
tot
stg
j
DS(AL)S
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive avalanche energy
non-repetitive avalanche current
Quick reference data
Limiting values
Conditions
25 C
25 C
t
duty cycle 25%; T
T
T
T
T
unclamped inductive load;
I
R
unclamped inductive load;
V
starting T
Conditions
25 C
T
T
V
p
D
mb
mb
mb
mb
mb
mb
mb
mb
DD
GS
GS
= 75 A; t
Rev. 01 — 26 April 2002
50 s; pulsed;
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 25 C; V
= 25 C
= 10 V; I
= 15 V; R
= 50 ; V
T
T
T
j
j
j
j
= 25 C
p
175 C
175 C; R
175 C
= 0.1 ms; V
D
Figure 1
GS
N-channel enhancement mode field-effect transistor
GS
GS
GS
= 25 A; T
GS
= 50 ; V
= 10 V; starting T
j
= 10 V;
= 10 V
= 10 V;
150 C
p
p
GS
DD
j
= 25 C
10 s;
10 s
= 20 k
Figure 2
GS
Figure 2
= 15 V;
= 10 V;
PSMN004-60P/60B
Figure 3
and
j
= 25 C
3
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
-
-
3.1
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
60
75
230
175
3.6
Max
60
60
75
75
400
230
+175
+175
75
400
500
75
20
30
2 of 13
Unit
V
A
W
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
A
C
C
C