PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN004-60P,127
• Description: MOSFET N-CH 60V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Input Capacitance (ciss) @ Vds: 8300pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057040127; PSMN004-60P; PSMN004-60P

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 09156
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
1
10 -6
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Thermal characteristics
SOT78
SOT404
0.2
0.1
0.05
0.02
= 0.5
single pulse
7.1 Transient thermal impedance
10 -5
10 -4
Rev. 01 — 26 April 2002
10 -3
Conditions
Figure 4
vertical in still air
mounted on a printed circuit board;
minimum footprint
N-channel enhancement mode field-effect transistor
10 -2
PSMN004-60P/60B
10 -1
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
P
t p
1
T
Min Typ Max Unit
-
-
-
t p (s)
=
t p
T
t
03af48
-
-
-
10
0.65 K/W
60
50
4 of 13
K/W
K/W