PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN004-60P,127
• Description: MOSFET N-CH 60V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Input Capacitance (ciss) @ Vds: 8300pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057040127; PSMN004-60P; PSMN004-60P

Philips Semiconductors
9397 750 09156
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
-60
= 0 V; f = 1 MHz
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 5
10 4
10 3
10 2
120
10 -1
T j (
o
03aa32
C)
180
Rev. 01 — 26 April 2002
1
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
(A)
10
I D
T
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
0
V DS (V)
03ah87
DS
PSMN004-60P/60B
10 2
= 5 V
C iss
C oss
C rss
2
min
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
typ
4
max
V GS (V)
03aa35
6
7 of 13