PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN004-60P,127
• Description: MOSFET N-CH 60V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Input Capacitance (ciss) @ Vds: 8300pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057040127; PSMN004-60P; PSMN004-60P

Philips Semiconductors
9. Package outline
Fig 14. SOT78 (TO-220AB).
9397 750 09156
Product data
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
3-lead TO-220AB
0.7
0.4
c
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
2
e
Rev. 01 — 26 April 2002
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
scale
EIAJ
5
N-channel enhancement mode field-effect transistor
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
PSMN004-60P/60B
max.
Q
3.0
L 2
A
A 1
PROJECTION
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3.8
3.6
c
EUROPEAN
p
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
00-09-07
01-02-16
SOT78
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