STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 12
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STD12N65M5
Manufacturer Part Number
STD12N65M5
Description
MOSFET N-CH 650V 8.5A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12N65M5.pdf
(18 pages)
Specifications of STD12N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
5.4 A, 8.5 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10568-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD12N65M5
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
12/18
DIM.
(L1)
A1
V1
b2
b4
c2
e1
L2
D
H
A
b
E
e
L
c
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
TO-251 (IPAK) mechanical data
Doc ID 15428 Rev 4
16.10
mm.
2.28
0.80
10
typ
o
STD/F/I/P/U12N65M5
0068771_H
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20