STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 17

• Manufacturer Part Number: STD12N65M5
• Description: MOSFET N-CH 650V 8.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 5.4 A, 8.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10568-2

STD/F/I/P/U12N65M5
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Revision history
Table 9.
24-Feb-2009
27-Feb-2009
21-Jan-2010
29-Jun-2010
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Figure 15: Normalized on resistance vs temperature
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