STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 7

• Manufacturer Part Number: STD12N65M5
• Description: MOSFET N-CH 650V 8.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 5.4 A, 8.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10568-2

STD/F/I/P/U12N65M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
V
1000
(V)
(pF)
(A)
100
12
14
12
10
10
I
GS
C
D
2
10
8
6
4
0
6
4
2
8
0
0
0
1
0.1
V
Output characteristics
DS
5
5
1
10
10
V
V
15
GS
DD
I
D
=10V
15
=520V
10
=4.3A
20
20
25
100
7V
25
30
V
6V
5V
GS
V
Q
V
Doc ID 15428 Rev 4
DS
DS
g
AM05575v1
AM05578v1
AM05579v1
(nC)
(V)
480
320
400
80
0
240
160
(V)
Ciss
Crss
Coss
Figure 9.
Figure 13. Output capacitance stored energy
E
R
oss
DS(on)
0.28
0.38
0.33
0.23
0.43
0.18
0.13
0.08
(A)
(Ω)
(µJ)
12
10
1.5
I
4.0
2.5
2.0
1.0
3.5
3.0
0.5
D
8
4
2
6
0
0
0
0
0
Transfer characteristics
1
100
2
2
200 300
3
4
4
Electrical characteristics
6
5
400
6
8
500 600
7
10
8
9
V
GS
AM05576v1
AM05577v1
AM05580v1
I
V
D
(V)
DS
(A)
(V)
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