STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 5

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STD12N65M5

Manufacturer Part Number
STD12N65M5
Description
MOSFET N-CH 650V 8.5A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD12N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
5.4 A, 8.5 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10568-2

Available stocks

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STD/F/I/P/U12N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
(off)
f
SD
t
t
(v)
(v)
(i)
rr
rr
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15428 Rev 4
I
I
V
I
V
(see
V
R
(see
(see
SD
SD
SD
DD
DD
DD
G
= 8.5 A, V
= 8.5 A, di/dt = 100 A/µs
= 8.5 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure
Figure
Test conditions
Test conditions
24)
21)
24)
GS
GS
D
j
= 150 °C
= 5 A,
= 10 V
= 0
Figure
24)
Electrical characteristics
Min.
Min.
-
Typ.
Typ.
230
280
2.2
2.7
9.5
19
19
28
24
34
Max. Unit
Max
8.5
1.5
34
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A

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