STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 6

• Manufacturer Part Number: STD12N65M5
• Description: MOSFET N-CH 650V 8.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 5.4 A, 8.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10568-2

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.01
0.1
(A)
10
I
D
1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220 and
I²PAK
Safe operating area for TO-220FP
Safe operating area for DPAK, IPAK Figure 7.
1
10
Tc=25°C
Tj=150°C
Sinlge
pulse
100
V
DS
(V)
Doc ID 15428 Rev 4
100µs
10µs
1ms
10ms
AM05572v1
Figure 3.
Figure 5.
Thermal impedance for DPAK, IPAK
Thermal impedance for TO-220 and
I²PAK
Thermal impedance for TO-220FP
STD/F/I/P/U12N65M5