STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 9
STD12N65M5
Manufacturer Part Number
STD12N65M5
Description
MOSFET N-CH 650V 8.5A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12N65M5.pdf
(18 pages)
Specifications of STD12N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
5.4 A, 8.5 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10568-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD12N65M5
Manufacturer:
ST
Quantity:
20 000
STD/F/I/P/U12N65M5
3
Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 15428 Rev 4
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
circuit
Test circuits
9/18