STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 9

• Manufacturer Part Number: STD12N65M5
• Description: MOSFET N-CH 650V 8.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 5.4 A, 8.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10568-2

STD/F/I/P/U12N65M5
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Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 15428 Rev 4
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
circuit
Test circuits
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