STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 18

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

Packaging mechanical data
5
18/22
Table 13.
Figure 26. D²PAK footprint
a. All dimension are in millimeters
Packaging mechanical data
Dim.
D1
A0
B0
K0
P0
P1
P2
W
D
R
E
F
T
12.20
D²PAK (TO-263) tape and reel mechanical data
Min.
10.5
15.7
1.59
1.65
11.4
11.9
0.25
23.7
1.5
4.8
3.9
1.9
50
Tape
mm
9.75
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
(a)
Doc ID 16832 Rev 4
Max.
10.7
15.9
1.61
1.85
11.6
12.1
0.35
24.3
1.6
5.0
4.1
2.1
16.90
Dim.
G
A
B
C
D
N
T
Base qty
Bulk qty
3.50
Min.
12.8
20.2
24.4
100
1.5
Reel
mm
1.60
Max.
1000
1000
13.2
26.4
30.4
330
5.08
Footprint