STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 7

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Figure 8.
Figure 10. Normalized B
Figure 12. Capacitance variations
(norm)
BV
1000
0.99
0.97
0.95
1.01
0.93
1.03
100
1.07
1.05
(pF)
(A)
DSS
20
15
10
25
10
I
C
D
5
0
1
-50
0
0.1
Output characteristics
-25
5
V
1
0
GS
=10V
I
D
=1mA
25
10
10
VDSS
50
15
75
vs temperature
100
100
20
6V
5V
T
V
J
Doc ID 16832 Rev 4
DS
(°C)
AM07210v1
AM07202v1
AM07206v1
V
(V)
DS
Ciss
Coss
Crss
(V)
Figure 9.
Figure 11. Static drain-source on resistance
Figure 13. Gate charge vs gate-source voltage
R
0.290
0.265
0.300
0.295
0.270
0.285
0.280
0.275
DS(on)
V
(Ohm)
(V)
(A)
20
15
10
12
10
25
I
GS
D
0
2
5
8
6
4
0
0
0
0
V
DS
Transfer characteristics
5
2
2
V
DS
10
4
=18V
4
V
V
DD
15
I
GS
D
Electrical characteristics
6
=400V
=12A
=10V
6
20
8
8
25
10
10
30
12
V
V
GS
GS
Q
AM07203v1
AM07204v1
(V)
AM07205v1
g
I
D
(nC)
400
200
150
0
350
300
250
100
50
(A)
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