STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 19

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Table 14.
Figure 27. DPAK footprint
b. All dimension are in millimeters
Dim.
D1
A0
B0
B1
K0
P0
P1
P2
W
D
R
E
F
T
DPAK (TO-252) tape and reel mechanical data
Min.
10.4
1.65
2.55
0.25
15.7
6.8
1.5
1.5
7.4
3.9
7.9
1.9
40
6.7
Tape
mm
(b)
Doc ID 16832 Rev 4
6.7
Max.
10.6
12.1
1.85
2.75
0.35
16.3
1.6
7.6
4.1
8.1
2.1
7
1.8
Dim.
G
A
B
C
D
N
T
3
Base qty.
Bulk qty.
1.6
1.6
Min.
12.8
20.2
16.4
1.5
50
Packaging mechanical data
2.3
2.3
Reel
mm
Max.
2500
2500
13.2
18.4
22.4
330
AM08850v1
19/22