STB14NM50N STMicroelectronics, STB14NM50N Datasheet - Page 6

• Manufacturer Part Number: STB14NM50N
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10644-2

Electrical characteristics
2.1
6/22
Figure 2.
Figure 4.
Figure 6.
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK
Safe operating area for DPAK
Safe operating area for TO-220FP
1
1
1
10
10
10
Tc=25°C
Tc=25°C
Tc=25°C
Tj=150°C
Single pulse
Tj=150°C
Single pulse
Tj=150°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
(V)
(V)
(V)
Doc ID 16832 Rev 4
100µs
100µs
100µs
AM07199v1
10µs
1ms
10ms
AM07200v1
10µs
1ms
10ms
AM07201v1
10µs
1ms
10ms
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK
Thermal impedance for DPAK
Thermal impedance for TO-220FP